? design assistance ? assembly assistance ? die handling consultancy ? hi - rel die qualification ? hot & cold die probing ? electrical test & trimming ? customised pack sizes / qtys ? support for all industry recognised ? 100% visual inspection contact baredie@micross.com for price, delivery and to place orders HMC331 supply formats: o waffle pack o gel pak o tape & reel ? onsite storage, stockholding & scheduling ? on - site failure analysis ? bespoke 24 hour monitored storage systems for secure long term product support o mil - std 883 condition a o mil - std 883 condition a ? on - site failure analysis www.analog.com www.micross.com
analog devices welcomes hittite microwave corporation no content on the attached documen t has changed www.analog.com www.hittite.com
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frequency multipliers - passive - chip 2 2 - 22 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC331 gaas mmic passive frequency doubler, 12 - 18 ghz input v04.1007 general description features functional diagram conversion loss: 14 db fo, 3fo, 4fo isolation: 50 db passive: no bias required die size: 0.85 x 0.55 x 0.1 mm electrical specifi cations, t a = +25 c, as a function of drive level typical applications the HMC331 is a passive miniature frequency doubler mmic. suppression of undesired fundamental and higher order harmonics is 50 db typical with respect to input signal level. the doubler utilizes the same gaas schottky diode/balun technology found in hittite mmic mixers. it features small size, requires no dc bias, and adds no measurable additive phase noise onto the multiplied signal. the HMC331 is suitable for: ? wireless local loop ? lmds, vsat, and point-to-point radios ? test equipment input = +11 dbm input = +13 dbm input = +15 dbm parameter min. typ. max. min. typ. max. min. typ. max. units frequency range, input 13 - 18 12 - 18 12 - 18 ghz frequency range, output 26 - 36 24 - 36 24 - 36 ghz conversion loss 15 20 14 20 14 19 db fo isolation (with respect to input level) 45 50 45 50 45 50 db 3fo isolation (with respect to input level) 50 60 45 60 47 60 db 4fo isolation (with respect to input level) 50 60 50 60 50 60 db
frequency multipliers - passive - chip 2 2 - 23 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion loss vs. temperature @ +15 dbm drive level conversion loss @ 25 c vs. drive level isolation @ +15 dbm drive level* input return loss vs. drive level output return loss for three input frequencies *with respect to input level -25 -20 -15 -10 -5 0 12 13 14 15 16 17 18 + 25 c + 85 c -55 c conversion gain (db) input frequency (ghz) -30 -25 -20 -15 -10 -5 0 12 13 14 15 16 17 18 + 15 dbm + 13 dbm + 11 dbm return loss (db) frequency (ghz) -30 -24 -18 -12 -6 0 22 24 26 28 30 32 34 36 13 ghz in 15 ghz in 18 ghz in return loss (db0 output frequency (ghz) -100 -80 -60 -40 -20 0 10 15 20 25 30 35 40 45 50 fo 3fo 4fo isolation (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 12 13 14 15 16 17 18 + 15 dbm + 13 dbm + 11 dbm conversion gain (db) frequency (ghz) HMC331 v04.1007 gaas mmic passive frequency doubler, 12 - 18 ghz input absolute maximum ratings input drive +27 dbm storage temperature -65 to +150 c operating temperature -55 to +85 c electrostatic sensitive device observe handling precautions
frequency multipliers - passive - chip 2 2 - 24 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing notes: 1. all dimensions are in inches [mm] 2. die thickness is .004 3. typical bond is .004 square 4. backside metallization: gold 5. bond pad metallization: gold 6. backside metal is ground. 7. connection not required for unlabeled bond pads. die packaging information [1] standard alternate gp-5 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. pad description HMC331 v04.1007 gaas mmic passive frequency doubler, 12 - 18 ghz input pad number function description interface schematic 1 rfin dc coupled and matched to 50 ohm. 2 rfout dc coupled and matched to 50 ohm. die bottom gnd die bottom must be connected to rf/dc ground.
frequency multipliers - passive - chip 2 2 - 25 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC331 v04.1007 gaas mmic passive frequency doubler, 12 - 18 ghz input mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrate should be brought as close to the die as possible in order to minimize ribbon bond length. typical die-to-substrate spacing is 0.076mm (3 mils). gold ribbon of 0.075mm ( 3 mil) width and minimal length <0.31mm ( <12 mils) is recommended to minimize inductance on rf ports., handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients : suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the moun t- ing surface should be clean and fl at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a te m- perature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40 - 60 grams. dc bonds of 0.001 (0.025mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40 - 50 grams and wedge bonds at 18 - 22 grams. all bonds should be made with a nominal stage temperature of 15 0 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possib le, less than 12 mils (0.31 mm). 0.102mm (0.004?) thick gaas mmic wire 3 mil ribbon bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic ribbon bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab
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